FGH40T65UQDF Datasheet, IGBT, ON Semiconductor

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FGH40T65UQDF Features and benefits

* Max Junction Temperature 175°C
* Positive Temperature Co−efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(s.

FGH40T65UQDF Application

* Induction Heating, MWO www.onsemi.com VCES 650 V IC 40 A C G E E C G COLLECTOR (FLANGE) TO−247−3LD CASE 340CH.

FGH40T65UQDF Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching ap.

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